Applied Physics Letters · 2004 · 226 citations · 11 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsConductive MaterialsDopingInorganic MaterialsOxide SemiconductorsSemiconductor Thin FilmsThin Film Electrical PropertiesCarrier ConcentrationConductionCrystallinityCrystallinity EffectsDopant IncorporationHall EffectN-type ConductivitySecondary Ion Mass Spectrometry
p -type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3Ωcm with a Hall mobility of 0.43cm2∕Vs and carrier concentration of 2.25×1017cm−3 for the N–Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region.
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Electrical properties of bulk ZnO
D. C. Look, D. C. Reynolds, J. R. Sizelove et al. · Solid State Communications · 1998 · 859 citations
Natural Sciences, Materials Engineering, Materials Science +14