Electronics Letters · 2004 · 22 citations · 4 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyCurrent-voltage CharacteristicsField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsCmos Analog Integrated CircuitsElectronic Circuit DesignNoise In Field-effect Transistors
A new constant-current voltage driver forms a bridge-type floating drain-source follower configuration applicable to the determination of H+ ion concentration. The proposed circuit maintains the ion-selective field effect transistor (ISFET) in an accurate constant drain-source voltage and current situation with good noise rejection capability. Simulation results show accurate response for ISFET applications. The presented electronic circuit can be integrated with a ISFET-based microsystem by standard CMOS technology.
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