Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons

Abstract

The effect of irradiation with 12.5-MeV electrons on the electrical and photoelectric parameters of layered photoconverters based on p -InSe- n -InSe and p -GaSe- n -InSe structures is studied. The observed variations in the current-voltage characteristics, photoresponse spectra, open-circuit voltage, and short-circuit current are caused by the formation of point defects. The absence of pronounced changes in the characteristics of the homojunctions and heterojunctions even after irradiation at the highest dose makes it possible to recommend these junctions for use in the fabrication of radiation-resistant photodetectors.