A 0.05×0.05mm2 RFID Chip with Easily Scaled-Down ID-Memory

Abstract

An ultra-small RFID chip uses an electron beam for writing 1T memory cells. A 90nm SOI CMOS process and double-surface electrode chip structures enable the design of 0.05times0.05mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 5mum-thick RFID chips with small, low-cost and highly-reliable 128b ID-memory. The chip is verified at a carrier frequency of 2.45GHz with measured communication distance of 300mm.