Theoretical possibility of stage corrugation in Si and Ge analogs of graphite

Abstract

The planarity of the aromatic stage of two-dimensional Si and Ge layers are theoretically investigated by first-principles total-energy calculations. While a C atom prefers to form the flat aromatic stage, i.e., graphite, Si and Ge prefer to form the corrugated aromatic stage. Si can be said to be the critical element by which the corrugated stage is formed.