Preparation of Crystals of Pure Hexagonal SiC

Abstract

The mode of growth of crystals in laboratory furnaces is examined. It is shown that the crystals grow in an environment dominated by radiation, and that this environment may be responsible for the specific orientation and possibly the habit of the crystals. It is demonstrated that, under normal experimental conditions, crystal growth is unlikely to proceed by a two‐dimensional nucleation mechanism. The means of producing relatively pure crystals are discussed.