AlGaInAs/InP Monolithically Integrated DFB Laser Array

Abstract

The monolithic integration of four 1.50-μm range AlGaInAs/InP distributed feed-back lasers with a 4 × 1 multimode-interference optical combiner, a curved semiconductor optical amplifier and an electroabsorption modulator using relatively simple technologies-sidewall grating and quantum well intermixing-has been demonstrated. The four channels span the wavelength range of 1530-1566 nm and can operate separately or simultaneously. The epitaxial structure was designed to produce a far field pattern at the output waveguide facet, which is as small as 21.2°× 25.1°, producing a coupling efficiency with an angled-end single mode fiber at twice that of a conventional device design.