Applied Physics Letters · 1997 · 60 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsQuantum DotsQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsBand AlignmentElectroluminescenceHeterostructure LasersMolecular Beam EpitaxyQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well LasersQuantum Well Structures
Multiple quantum well InAs/GaSb laser heterostructures with type III (type II broken gap) band alignment in the active region have been grown by molecular beam epitaxy. Intense electroluminescence was observed at room temperature (RT) with peak emission wavelengths in the range 1.95–3.4 μm. RT lasing has been achieved at 1.98 and 2.32 μm for the structures with 6 and 12 Å thick InAs quantum wells, respectively.
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Midwave infrared stimulated emission from a GaInSb/InAs superlattice
R. H. Miles, D. H. Chow, Y.-H. Zhang et al. · Applied Physics Letters · 1995 · 86 citations