Surface analytical investigations of Al and (Ti, Al) nitrides formed by ion implantation and their corrosion properties

Abstract

Abstract Nitrides of Ti, Al and TiAl x alloys were prepared by low energy ion implantation (3 keV N 2 + ). The layer thickness was ∼ 10 nm. The nitride layers were characterized using XPS, UPS and a Kelvin probe. The insulating properties known for bulk AlN were found also for the prepared AlN impl layers. The work functions for the alloys and the nitrides and their variation with the ion dose were determined. Peak parameters for the XP spectra deconvolution were established. Despite their thinness, the layers showed anodic stability in 0.5 M H 2 SO 4 up to 1.3 V (SHE) for (TiAl)N impl and even up to 1.8 V (SHE) for AlN impl . Above these potentials, the nitrides were oxidized to metal oxides.