Implanted-Barrier Two-Phase Charge-Coupled Device

Abstract

A new kind of charge-coupled device (CCD) utilizing an ion-implanted barrier and only two nonoverlapping electrodes per bit is described. The use of implanted charge substantially simplifies device structure. The two-electrode-per-bit configuration permits operation with only one clock. In addition, the device performs better than any previously reported CCD with a loss per transfer of less than 0. 1% up to 6. 5 MHz and 2% at 17 MHz.