Transactions of the Faraday Society · 1967 · 25 citations · 0 references
Natural SciencesChemistryPhysicsCondensed Matter PhysicsPhysical ChemistrySolid State PhysicsCrystal ChemistryDefect ThermodynamicsDefects In Electronic MaterialsThermal Properties Of MaterialsDefect Formation Free EnergyIonic ConductionIonic Conduction In CrystalsIonic DefectsMelting PointSchottky DefectsTemperature Dependence Of Ionic ConductivityThermodynamics Of Ionic Solids
The space-charge polarization capacity and the conductance of single crystals of thallous chloride have been measured as a function of frequency between 80°C and just below the melting point (427°C). Analysis of these data gives new values of the free energies of formation and motion of the Schottky defects which are characteristic of this system. Thus, hf= 1.36 eV; hm(cation)= 0.40 eV; hm(anion)= 0.09 eV. The defect concentration at the melting point x0(Tm)≈0.08 at %.