Publication | Closed Access
Nondislocation Origin of GaAs Nanoindentation Pop-In Event
75
Citations
25
References
2007
Year
SemiconductorsMaterials ScienceDislocation NucleationEngineeringPhysicsDislocation InteractionNew PhaseApplied PhysicsAtomic PhysicsNanoscale ModelingNondislocation OriginDefect FormationPop-in EventNanoscale ScienceOptoelectronicsCompound SemiconductorSemiconductor Nanostructures
The present Letter demonstrates a pop-in event that is caused by a nanoindentation-induced phase transformation in GaAs, and not accompanied by any dislocation nucleation. Our computer simulations reveal the appearance of the new phase, documented by the structural correlation functions and visualization of the atomic positions. This challenges the orthodox view that the initial pop-in event reflects nucleation of dislocations or their movement, and has a bearing on materials where dislocation activity is not present.
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