Fabrication of Surface Acoustic Wave-Semiconductor Coupled Devices Using Epitaxial Lift-Off Technology

Abstract

In this paper, we report the results of a study on the fabrication process of surface acoustic wave-semiconductor coupled devices, using epitaxial lift-off (ELO) and thin-film bonding technology. In order to realize a rugged bonding interface between the semiconductor film and piezoelectric substrate, we studied the 1) optimum conditions controlling stress in GaAs films, 2) reduction of releasing time for GaAs films, 3) and enhancement of bonding force between the film and LiNbO 3 substrate. The experimental results clarified that these process improvements were effective for fabricating functional devices with the AlGaAs/LiNbO 3 structure.