Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures

Abstract

Intrinsic high-frequency oscillations (\ensuremath{\approxeq}2.5 THz) in current and corresponding quantum-well density have been simulated for the first time for a fixed-bias voltage in the negative differential resistance (NDR) region of the current-voltage (I-V) characteristics of a resonant tunneling diode. Scattering and self-consistency are included. Hysteresis and ``plateaulike'' behavior of the time-averaged I-V curve are simulated in the NDR region. Intrinsic bistability is manifested by the phenomenon of unstable electron charge buildup and ejection from the quantum well.