Publication | Closed Access
Effect of electron-electron scattering on nonequilibrium transport in quantum-well systems
285
Citations
24
References
1988
Year
Categoryquantum ElectronicsCharge ExcitationsEngineeringFull Multisubband SystemElectron PhysicSemiconductorsQuantum MaterialsTransport PhenomenaLaser ExcitationQuantum MatterCharge Carrier TransportQuantum ScienceNonequilibrium TransportPhysicsQuantum DeviceNatural SciencesApplied PhysicsCondensed Matter PhysicsQuantum DevicesOptoelectronics
We model nonequilibrium transport in a GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum-well structure using an ensemble Monte Carlo simulation of the full multisubband system in which we include electron-electron (e-e) scattering explicitly into the calculation. The e-e scattering cross section is calculated using the Born approximation and introduced into the transient Monte Carlo simulation via a self-scattering technique. This interaction is found to be especially effective in transferring energy between different subbands, thus thermalizing the carriers within a picosecond. The model described herein is applied to the study of laser-excited carriers in a quantum-well system and to the response of such a system to high parallel electric fields. In the case of laser excitation, e-e interaction may dominate the initial evolution, reducing the cascade of carriers via optical-phonon emission.
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