Physical review. B, Condensed matter · 1988 · 286 citations · 24 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor MaterialsTransport PhenomenaCarrier TransportElectron TransportElectronic Transport ModelingQuantum WellsSemiconductor PhysicsThermal Properties Of SemiconductorsBorn ApproximationCarrier DynamicsCarrier Transport In Quantum WellsCarrier Transport ModelingExcitationQuantum Well StructuresTransport In Quantum WellsTransport In Semiconductors
We model nonequilibrium transport in a GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum-well structure using an ensemble Monte Carlo simulation of the full multisubband system in which we include electron-electron (e-e) scattering explicitly into the calculation. The e-e scattering cross section is calculated using the Born approximation and introduced into the transient Monte Carlo simulation via a self-scattering technique. This interaction is found to be especially effective in transferring energy between different subbands, thus thermalizing the carriers within a picosecond. The model described herein is applied to the study of laser-excited carriers in a quantum-well system and to the response of such a system to high parallel electric fields. In the case of laser excitation, e-e interaction may dominate the initial evolution, reducing the cascade of carriers via optical-phonon emission.
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Electronic properties of two-dimensional systems
Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations
Natural Sciences, Chemistry, Physics +16
Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum Wells
Jagdeep Shah, A. Pinczuk, A. C. Gossard et al. · Physical Review Letters · 1985 · 397 citations