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The transition from αZr to αZrO2 growth in sputter-deposited films as a function of gas O2 content, rare-gas type, and cathode voltage
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1989
Year
Optical MaterialsEngineeringAtomic Emission SpectroscopyGlow DischargeThin Film Process TechnologyChemistryChemical DepositionZr TargetOptical DiagnosticsFused Sio2Ion EmissionRare-gas TypeThin Film ProcessingMaterials ScienceOxide ElectronicsOptoelectronic MaterialsRare GasGas O2 ContentSurface ScienceApplied PhysicsThin FilmsGas Discharge PlasmaChemical Vapor DepositionCathode Voltage
In this study, a Zr target was sputtered in rf-excited, rare gas discharges (Kr, Ar, Ne) containing O–4% O2, operated at cathode voltages from −1.3 to −1.9 kV. In situ optical emission spectrometry was used to monitor three transitions of the neutral excited Zr atom in the discharge (λ3520, 3548, and 3601 Å). Films were deposited on fused SiO2 and their crystallography, optical behavior, and electrical resistivity were determined, postdeposition. The sequence of phases that evolved in the Zr–O system was αZr→transition phases→α+βZrO2→αZrO2. The sequence was shifted towards αZrO2 with increasing gas O2 content, changing rare gas from Kr→Ar→Ne, and decreasing cathode voltage. The results are discussed in terms of a two-step oxidation process involving both electrodes.