Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 13 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceNanotechnologyPhotonicsStorage SystemsLaser DiodesNanostructured Electronic MaterialsNear-field RegionsPhotonic Device SimulationSemiconductor LasersSemiconductor NanomaterialsHigh-density Storage SystemsMaximum Power OutputNanocavitiesNanophotonic CavitiesNanophotonic Device SimulationNear-field OpticsOptical Data StorageVertical-cavity Surface-emitting Lasers
We designed and demonstrated a unique C-shaped nanoaperture (C-aperture) Vertical-Cavity Surface-Emitting Laser with an estimated maximum net power of 113 μW coming from a 70nm C-aperture. Simulation shows the near-field FWHM spot size at 30nm away from the C-aperture is 94nm and 108nm in X and Y direction. We estimate the peak near-field intensity from the C-aperture VCSEL to be as high as 13.7mW/μm<sup>2</sup>. This high intensity and small spot size is promising to realize high-density near-field optical data storage.
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