Sensitivity analyses of the thermophysical properties of silicon melt and crystal

Abstract

A set of global numerical simulations based on a simple, laminar, axisymmetric and pseudo steady model of a small silicon CZ furnace was conducted to reveal the influences of the thermophysical properties of the melt and crystal on the non-dimensional crystal pulling rate, i.e., the Peclet number Pe, and the deflection of the melt/crystal interface Δz, for the sensitivity analyses of the properties. The properties investigated here are the temperature coefficient of surface tension, viscosity, thermal conductivity, the thermal expansion coefficient and emissivity of the melt, and the thermal conductivity and emissivity of the crystal. The results demonstrated that, concerning the thermophysical properties of the melt, emissivity is relatively sensitive to Pe and Δz. Concerning the crystal properties, thermal conductivity is more sensitive to Pe, while emissivity is more sensitive to Δz.