Optical Fiber Communication Conference · 2014 · 15 citations · 2 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesOptoelectronic DevicesPhotodetectorsPhotonic Integrated CircuitsSemiconductor DetectorsSemiconductor Device MaterialsSilicon PhotonicsAvalanche Photodiode DetectorsAvalanche PhotodiodesCmos-compatible PhotonicsPhotodiode CircuitsPhotodiodesSilicon PhotodiodesSilicon Photonics For Communications
We accomplished the first mass-production of Ge/Si avalanche photodiode (APD) for FTTx applications in a standard CMOS foundry. Our APDs satisfy sensitivity requirements of 10G PON (both OLT and ONU sides) applications within −5°C~75°C.
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