Japanese Journal of Applied Physics · 1980 · 137 citations · 5 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsOpticsSemiconductor MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsDefects In Electronic MaterialsOptical Properties Of SemiconductorsSemiconductor DefectsAmorphous SiliconDangling Bond DefectsDefect-related LuminescenceOptical Properties Of Amorphous MaterialsSilicon DefectsSilicon Optical Properties
New evidence for creation of dangling bonds by high optical excitation at low temperatures is presented through the time-resolved luminescence measurements and ESR measurements in glow discharge amorphous silicon.
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Hydrogen evolution and defect creation in amorphous Si: H alloys
D. K. Biegelsen, R. A. Street, C. C. Tsai et al. · Physical review. B, Condensed matter · 1979 · 251 citations
Optically detected electron spin resonance in amorphous silicon
Kazuo Morigaki, D. J. Dunstan, B.C. Cavenett et al. · Solid State Communications · 1978 · 89 citations