Change of the Fermi Surface across the Critical Pressure in CeIn<sub>3</sub>: The de Haas–van Alphen Study under Pressure

Rikio Settai, Tetsuo Kubo, T. Shiromoto, Daisuke Honda, Hiroaki Shishido, Kiyohiro Sugiyama, Yoshinori Haga, Tatsuma D. Matsuda, Kiyoshi Betsuyaku, Hisatomo Harima,

Journal of the Physical Society of Japan · 2005 · 63 citations · 22 references

Concepts

Abstract

We have studied a change of the Fermi surface in an antiferromagnet CeIn 3 via the de Haas–van Alphen experiment under pressure up to 3 GPa. With increasing pressure P , the Néel temperature T N =10 K decreases and becomes zero at a critical pressure P c ≃2.6 GPa. In the pressure region P > P c , we have observed a large main Fermi surface named a , which indicates that the electronic state of 4 f electron in CeIn 3 changes from localized to itinerant at P c , as observed in the similar antiferromagnets CeRh 2 Si 2 and CeRhIn 5 . The cyclotron effective mass m c * of this main Fermi surface is extremely enhanced around P c : m c * ≃60 m 0 at 2.7 GPa for the magnetic field along the <100 > direction.

References

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