Applied Physics Letters · 2010 · 51 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsQuantum DotsSemiconductor NanomaterialsSolar Cell MaterialsSolar CellsNanostructured Photovoltaic MaterialsNanostructured Solar CellsPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot DevicesQuantum Dot Solar CellsQuantum Well StructuresSemiconductor Quantum Dots
We report In0.4Ga0.6As quantum dot (QD) solar cells with In0.2Ga0.8As cap layers, which extends the photoabsorption spectra toward a wavelength longer than those of In0.4Ga0.6As QD solar cells without cap layers. Well-aligned 50-stack In0.4Ga0.6As QD structures with In0.2Ga0.8As cap layers can be grown without using a strain balancing technique. The photoluminescence wavelength of ten-stack In0.4Ga0.6As QDs with an In0.2Ga0.8As cap layer becomes longer, as a result of the reduced strain in the QDs achieved by using the cap layer. The cell characteristics of multistacked In0.4Ga0.6As QD solar cells are improved by employing In0.2Ga0.8As cap layers.
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Emitter degradation in quantum dot intermediate band solar cells
N. López, E. Antolín, Enrique Cánovas et al. · Applied Physics Letters · 2007 · 224 citations