Low temperature VUV-assisted oxidation of Ge

Abstract

Direct photo-oxidation of germanium at temperatures < 400 °C using vacuum ultraviolet (VUV) radiation from an excimer lamp has been investigated. The oxidation rate of 0.1 nm/min is significantly faster than conventional thermal oxidation. Single wavelength ellipsometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy measurements indicate that the grown layers are stoichiometric GeO2.