Photoluminescence study of native defects in InP

Abstract

A photoluminescence (PL) study of native defects and their distribution in polycrystalline ingots of melt-grown InP is reported. Three bands with peak positions at 0.99, 1.08, and 1.21 eV were found with systematic intensity changes along the length of the ingots. The PL bands were identified with the help of isothermal anneals as due to a donorlike P vacancy (0.99 eV), acceptorlike In vacancy or P interstitial (1.21 eV), and their complex (1.08 eV). The temperature dependence of the PL intensity compares well with the D-function potential model of Lucovsky.