LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SI

Abstract

Measurements of the surface topography of ion-bombarded GaAs and Si show a marked elevation of the irradiated portion of the surface relative to the surrounding unirradiated material. The average lattice atom displacement brought about by the expansion can cause anomalously high yields of displaced atoms as measured by backscattering of particles incident along channeling directions.