Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation

Abstract

The threshold voltage shift of amorphous silicon thin film transistors (TFT's) under pulse operation is discussed. The stress time, stress voltage, duty ratio and frequency dependence of the shift have been measured. A positive voltage stress causes a constant shift, when the frequency is in the range from DC to over 100 kHz. On the other hand, the shift under a negative pulse stress depends on its repetition frequency and its pulse width and can be described by an equivalent circuit model. Based on these data, a more reliable estimate of the long-term reliability of an amorphous silicon TFT panel has been realized.