Electric-field-induced absorption changes in triangular quantum wells grown by pulsed-beam molecular-beam-epitaxy technique

Abstract

We present an observation of electric-field-induced excitonic quenching in GaAs/AlGaAs triangular quantum wells, grown by pulsed-beam molecular-beam-epitaxy technique. We have measured photocurrent spectra for both symmetric and asymmetric triangular quantum wells as a function of electric field. In both cases, at the ground-state exciton energy, we observed significant electroabsorption changes that were associated with the vanishing of sharp exciton resonances when the triangular quantum-well structures were electrically switched to systems with no quantum confinement for one or both types of carriers.