Improvement of Electrode/Organic Layer Interfaces by the Insertion of Monolayer-like Aluminum Oxide Film

Abstract

Insertion of a thin film of aluminum oxide (Al 2 O 3 ) at the interface of electrodes and organic layers has been investigated. Insertion of a thin film of Al 2 O 3 at the interface of the ITO anode and the diamine derivative (TPD) layers, as well as at the interface of the 8-hydroxyquinoline aluminum (Alq 3 ) and the Mg:Ag cathode in the electroluminescent (EL) diode has been examined. The insertion of an Al 2 O 3 layer with a proper thickness was observed to enhances the emission efficiency of the device. The mechanism of quantum efficiency enhancement of the device was studied.