Applied Physics Letters · 1987 · 18 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsEtching ProcessesLaser PhysicsOptical SourcesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersDevice FabricationDifferential Quantum EfficiencyHeterostructure LasersHigh-power Semiconductor LasersIon Beam EtchingMetalorganic Chemical Vapor DepositionQuantum Well HeterostructuresQuantum Well Lasers
We report the first use of chemically assisted ion beam etching to form laser mirrors on GaAlAs graded index separate confinement single quantum well heterostructures grown by metalorganic chemical vapor deposition. Over 80 mW cw optical power is obtained from the etched facet of uncoated 300-μm-long, etched/cleaved 60 μm stripe devices mounted p side up, and catastrophic failure occurs at a cw power as high as 205 mW. Differential quantum efficiencies for light emitted from the etched facet are 32% pulsed (27% cw) and the threshold current is 145 mA pulsed (150 mA cw).
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GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
L.A. Coldren, Kenichi Iga, B.I. Miller et al. · Applied Physics Letters · 1980 · 105 citations
Focused-ion-beam micromachined AlGaAs semiconductor laser mirrors
J. Puretz, Richard K. DeFreez, Richard A. Elliott et al. · Electronics Letters · 1986 · 43 citations