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Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices
57
Citations
11
References
2001
Year
Optical MaterialsZnse/bete Type-ii SuperlatticesEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsShort-wavelength Intersubband TransitionsIi-vi SemiconductorQuantum MaterialsCompound SemiconductorIntersubband TransitionMaterials SciencePhysicsOptoelectronic MaterialsElectron Intersubband AbsorptionSolid-state PhysicApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresOptoelectronics
We report photoinduced electron intersubband absorption in ZnSe/BeTe type-II superlattices. The wavelength of the intersubband transition as short as 1.6 μm, covering the 1.55 μm optical communication wavelengths within its absorption band width (∼250 nm), is achieved in the ZnSe/BeTe SLs with 4.5 ML-thick ZnSe layers. The intensity in photoinduced intersubband absorption increases sublinearly with pump intensity, reflecting the characteristic recombination processes of electron-hole pairs in a heterostructure with type-II band alignment.
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