In-Plane Aligned Y₁Ba₂Cu₃O_7-x Tapes on Metallic Substrate by Chemical Vapor Deposition Technique

Abstract

In-plane aligned Y 1 Ba 2 Cu 3 O 7- x thin-film tapes have been prepared by the chemical vapor deposition technique on a metallic substrate at 700° C. For continuous deposition on a long substrate, tetrahydrofuran solution of Y, Ba and Cu β-diketonate chelate was slowly introduced to a vaporizer with argon gas by a liquid flow controller. The generated gas, including source metals, was carried to a reactor with oxygen. The orientation-controlled Y 1 Ba 2 Cu 3 O 7- x thin-film tapes could be obtained by this system on a Hastelloy C-276 substrate with an in-plane aligned yttrium-stabilized zirconia buffer layer. The critical temperature defined by zero resistance was 88.5 K and the critical current density at 77 K in 0 T was 2.74×10 4 A/cm 2 .