Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory

Noboru Yamada, Eiji Ohno, Kenichi Nishiuchi et al. · Journal of Applied Physics · 1991 · 1.5K citations

Natural Sciences, Materials Engineering, Materials Science +17

Understanding the phase-change mechanism of rewritable optical media

Alexander V. Kolobov, Paul Fons, Anatoly I. Frenkel et al. · Nature Materials · 2004 · 1.3K citations

Natural Sciences, Materials Science, Physics +14

Low-cost and nanoscale non-volatile memory concept for future silicon chips

M.H.R. Lankhorst, Bas Ketelaars, R.A.M. Wolters · Nature Materials · 2005 · 1.1K citations

Engineering, Computer Engineering, Electrical Engineering +14

Phase change memories: State-of-the-art, challenges and perspectives

Andrea L. Lacaita · Solid-State Electronics · 2006 · 281 citations

Engineering, Materials Engineering, Materials Science +12

Crystallization process of Sb-Te alloy films for optical storage

Susumu Fujimori, Shôgo Yagi, Hiroki Yamazaki et al. · Journal of Applied Physics · 1988 · 126 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17