Publication | Closed Access

Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

Materials ScienceEngineeringN SourceGaasn FilmsApplied PhysicsCarbon Incorporation ProcessMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsChemical Vapor DepositionCompound Semiconductor