Physical Review · 1961 · 65 citations · 12 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSolid State PhysicsAbsorption SpectroscopyElectron-phonon InteractionsElectronic Band StructureInterband TransitionsSilicon Carbide (Sic) Materials
Using four phonon energies, $TA=0.045$, $LA=0.067$, $TO=0.0955$, and $LO=0.1055$ ev, it is possible to explain, as summation bands, the ten absorption bands lying in the energy range 0.130 to 0.300 ev. Phonon energies close to three of the four given here have been obtained by an analysis of the indirect interband absorption in SiC.
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Fine Structure in the Absorption-Edge Spectrum of Si
G. G. Macfarlane, Thomas McLean, J E Quarrington et al. · Physical Review · 1958 · 607 citations
Infrared Properties of Hexagonal Silicon Carbide
W. G. Spitzer, D. A. Kleinman, D. Walsh · Physical Review · 1959 · 468 citations
Natural Sciences, Materials Engineering, Materials Science +17
Lattice Vibrations in Silicon and Germanium
B. N. Brockhouse · Physical Review Letters · 1959 · 354 citations
Fine Structure in the Absorption-Edge Spectrum of Ge
G. G. Macfarlane, Thomas McLean, J E Quarrington et al. · Physical Review · 1957 · 353 citations
Normal Modes of Germanium by Neutron Spectrometry
B. N. Brockhouse, P.K. Iyengar · Physical Review · 1958 · 302 citations