Assembly of one-dimensional nanorods into Bi2S3 films with enhanced thermoelectric transport properties

Abstract

Bismuth sulfide thin films have been assembled by cross-linkage nanorods on surface-functionalized Si substrate with self-assembled monolayers. Results of transmission electron microscopy and electron diffraction revealed that highly crystalline Bi2S3 nanorods grow along c-axis direction. Electrical transport properties including resistivity (0.02Ωcm), thermopower (−755μVK−1), and carrier mobilities (1100cm2V−1s−1) of the Bi2S3 films at 300K are found superior to those of previously reported Bi2S3 samples. The Bi2S3 films exhibit a maximum thermoelectric power factor (3.97×10−3Wm−1K−2) at 450K. The enhancement of thermoelectric properties mainly originates from highly crystalline and oriented nanostructures embedded in the Bi2S3 films.