Journal of Applied Physics · 2009 · 25 citations · 26 references
EngineeringMaterials EngineeringMaterials ScienceRadiation DetectionSemiconductor MaterialsThin FilmsDetector TechnologyDevice ScalingPhotodetectorsSemiconductor Crystal GrowthSemiconductor DetectorsSemiconductor Device MaterialsCadmium Zinc TellurideCadmium Zinc Telluride DetectorsDetector Energy ResolutionDetector FabricationDetectorsLarge-volume DetectorsRadiation Energy ResolutionSemiconductor Radiation Detectors
This work focuses on the thickness scalability of traveling heater method (THM) grown CdZnTe crystals to produce large volume detectors with optimized spectroscopic performance. To meet this challenge, we have tuned both our THM growth process, to grow 75 mm diameter ingots, and our postgrowth annealing process. We have increased the thickness of our sliced wafers from 6 to 12 and 18 mm allowing the production of 10 and 15 mm thick detectors. As the detectors’ thickness is scaled up, the energy resolution of both types, as pseudo-Frisch grid and pixelated monolithic detectors showed no degradation indicating improved materials uniformity and transport properties.
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Properties of CdZnTe crystals grown by a high pressure Bridgman method
F. Patrick Doty, J.F. Butler, J. F. Schetzina et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 181 citations
Natural Sciences, Materials Engineering, Materials Science +16
Effect of Te precipitates on the performance of CdZnTe detectors
G. Carini, A. E. Bolotnikov, G. S. Camarda et al. · Applied Physics Letters · 2006 · 151 citations