Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasers

Abstract

Measurements are reported of the electrical characteristics and temperature dependence of threshold current of InGaAsP-InP d.h. lasers (λ = 1.3 μm). Analysis of the I dV/dI characteristics of these devices indicates that drift leakage of carriers from the active region is not responsible for the high temperature sensitivity of threshold in this material system.