Electronics Letters · 1980 · 41 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor LasersLasersLeakageQuantum Well Laser DiodesSemiconductor Laser DiodesTemperature DependenceTemperature Dependence MeasurementTemperature SensitivityThreshold Behavior
Measurements are reported of the electrical characteristics and temperature dependence of threshold current of InGaAsP-InP d.h. lasers (λ = 1.3 μm). Analysis of the I dV/dI characteristics of these devices indicates that drift leakage of carriers from the active region is not responsible for the high temperature sensitivity of threshold in this material system.
1