Applied Physics Letters · 2013 · 44 citations · 18 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureSolid-state ChemistryThin FilmsFerroelectric CeramicsFerroelectric MaterialsInorganic MaterialsPerovskite MaterialsPhase TransitionsThin Film Electrical PropertiesFerroelectric PropertiesFerroelectric Thin FilmsFerroelectricityMorphotropic Phase BoundaryPerovskite Crystal StructurePhase CoexistenceSpontaneous PolarizationThin Film Ferroelectrics
We prepared the chemical-solution deposited films of BiFe1−xGaxO3, which was previously only possibly synthesized under high-pressure and high-temperature. The thin films crystallized in rhombohedral perovskite structure (R3c) up to x = 0.05 and in tetragonal-like monoclinic structure (Cm) above x = 0.2. The coexistence of R3c and Cm phases was observed at x = 0.1. It is found that Bi-based film with coexistence phase exhibits a huge ferroelectric polarization of 230 μC cm−2, which can be attributed to the presence of the morphotropic phase boundary.
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Physics and Applications of Bismuth Ferrite
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