Preparation of BaTiO3 thin films by backside pulsed ion-beam evaporation

Abstract

Barium titanate (BaTiO3) thin films were successfully prepared in situ on Al/SiO2/Si(100) substrates by backside deposition from intense, pulsed, ion-beam evaporation using a 1.3 MeV, 50 ns, 25 J/cm2 ion beam. Good morphology of the films prepared was observed, where no droplets appear compared to normal frontal-side deposition. The deposition rates were typically 100 nm/shot. The films were perovskite polycrystals. The capacitance of the thin films (at 1 kHz) increased from 3 to 10 nF/mm2 with increasing substrate temperature from 25 to 250 °C, respectively.