Electronics Letters · 1982 · 49 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsIntegrated OpticsLaser OpticsLaser PhysicsOptical SourcesPhotonic Integrated CircuitsSemiconductor LasersDifferential Quantum EfficiencyDistributed Feedback LasersHeterostructure LasersOptical GainQuantum EfficiencySemiconductor Laser FabricationSingle-mode OperationWaveguide Lasers
A new 1.5 μm-wavelength GalnAsP/InP distributed feedback buried-heterostructure laser was fabricated by a three-step LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from −20°C to 55°C was obtained.