New 1.5 μm wavelength GaInAsp/InP distributed feedback laser

Abstract

A new 1.5 μm-wavelength GalnAsP/InP distributed feedback buried-heterostructure laser was fabricated by a three-step LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from −20°C to 55°C was obtained.