Lowering of breakdown voltage of semiconductor silicon due to the precipitation of impurity carbon - Concepedia

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Lowering of breakdown voltage of semiconductor silicon due to the precipitation of impurity carbon

21

Citations

6

References

1973

Year

Nobu Akiyama, Y. Yatsurugi, Yoshiyuki Endo, Z. Imayoshi, T. Nozaki

Applied Physics Letters

Electrical EngineeringEngineeringImpurity CarbonIntrinsic ImpurityApplied PhysicsSilicon DiodesTime-dependent Dielectric BreakdownSemiconductor Device FabricationMicroelectronicsSemiconductor SiliconBreakdown VoltageSilicon Debugging

Abstract

The lowering of breakdown voltage and the softening of V-I curves of silicon diodes, caused by the precipitation of impurity carbon, have been observed.

References

	Year	Citations
The solubility of carbon in pulled silicon crystals A.R. Bean, R.C. Newman Journal of Physics and Chemistry of Solids Materials ScienceEngineeringGlassy CarbonNanoelectronicsPulled Silicon Crystals	1971	201
The effect of carbon on thermal donor formation in heat treated pulled silicon crystals A.R. Bean, R.C. Newman Journal of Physics and Chemistry of Solids Materials ScienceEngineeringSilicon CrystalsThermal TransportApplied Physics	1972	173
Concentration and Behavior of Carbon in Semiconductor Silicon Tadashi Nozaki, Yoshifumi Yatsurugi, Nobuyuki AKIYAMA Journal of The Electrochemical Society SemiconductorsMaterials ScienceEngineeringCarbon BehaviorCarbon-based Material	1970	145
Effect of Carbon on the Lattice Parameter of Silicon John A. Baker, T. N. Tucker, Norman Edward Moyer, Journal of Applied Physics Materials ScienceCarbon ContentEngineeringGlassy CarbonPhysics	1968	111
Charged particle activation analysis for carbon, nitrogen and oxygen in semiconductor silicon T. Nozaki, Y. Yatsurugi, Nobu Akiyama Journal of Radioanalytical and Nuclear Chemistry Semiconductor DevicePhysicsApplied PhysicsSemiconductor Device FabricationSilicon On Insulator	1970	43
Infrared spectrophotometry for carbon in silicon as calibrated by charged particle activation Yoshiyuki Endo, Yoshifumi Yatsurugi, Nobuyuki AKIYAMA, Analytical Chemistry EngineeringAltmetric Attention ScoreChemistryInfrared SpectrophotometrySilicon On Insulator	1972	31

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