Photoluminescence study of ZnCdO alloy

Abstract

The photoluminescence (PL) properties of ZnCdO alloy are investigated at various temperatures. Each PL profile contains four distinct peaks: P1, P2, P3, and P4. Peak P4 is due to free-excitonic recombination. The temperature mapping of the P3 peak position shows an S-shaped shift similar to the InGaN system due to the inhomogeneous distribution of Cd in ZnCdO alloy. The peak P2 is attributed to the phonon replica of the localized excitonic emission (P3). The linewidth of the photoluminescence profiles of the ZnCdO alloy is shown to depend on the concentration of Cd.