GaN: A Reliable Future in Power Conversion: Dramatic performance improvements at a lower cost

Abstract

For the first time in 60 years, a new, higher-performance technology is less expensive to produce than its silicon counterpart. Gallium nitride (GaN), grown as a thin layer on top of a standard silicon substrate, has demonstrated both a dramatic improvement in transistor performance [1] and the ability to be produced at a lower cost than its aging silicon ancestors. Enhancement-mode GaN transistors have unleashed new applications because of their ability to switch higher voltages and higher currents faster than any transistor before. In this article, we will discuss the status of the technology in terms of device performance, cost, and product reliability.