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Hole Transporting Materials with High Glass Transition Temperatures for Use in Organic Light-Emitting Devices
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1998
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Optical MaterialsEngineeringOrganic ElectronicsOptoelectronic DevicesChemistryElectronic DevicesHole Transporting MaterialsHigh Tg HolePhotodetectorsOptical PropertiesElectronic PackagingMaterials SciencePhotonicsOptoelectronic MaterialsOrganic SemiconductorOrganic Light-emitting DevicesOrganic MaterialsElectron AffinitiesOrganic Charge-transfer CompoundWhite OledElectronic MaterialsSemiconducting PolymerApplied PhysicsOptoelectronicsBiphenyl Backbone
Efficient and stable organic light-emitting devices (OLEDs) can be fabricated using hole transporting materials with a high glass transition temperature (Tg), as reported here. A series of devices utilizing high Tg hole transporting layers, consisting of compounds with a biphenyl backbone such as the one shown in the Figure, are investigated with respect to their I–V characteristics, external quantum efficiencies, ionization potentials, and electron affinities.