Multiple gated InAs dot ensembles

Abstract

We adapt a multiple gating technology to characterize electrically an ensemble of “self-assembled” InAs dots embedded in a plane within an Al0.20Ga0.80As tunneling barrier. Although the μm-sized mesa incorporates several hundred dots, we find that only a few of them contribute to the current close to threshold. Gating allows us to probe the origin of the sharp current peaks, and we can classify these peaks into families in a simple way according to their gate voltage dependence.