An ABCD parameter based modeling and analysis of crosstalk induced effects in Multilayer Graphene Nano Ribbon interconnects

Abstract

Crosstalk effects in Multilayer Graphene Nano Ribbon interconnects (GNRs) are investigated with the help of ABCD parameter matrix approach for intermediate and global level interconnects at 11 nm technology node. For long intermediate and global levels of interconnects, the worst case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are far lesser than that of copper interconnects. Though neutral GNR interconnects introduce lesser worst case peak crosstalk noise voltage, it contributes more noise than its doped counterpart. Perfectly specular, doped multilayer zigzag GNR interconnects prove to be a suitable alternative to copper interconnects for future Integrated circuit.