High Performance n- and p-Type Field-Effect Transistors Based on Tetrathiafulvalene Derivatives

Abstract

The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The π-stacking structures were observed in the single crystals of tetrahalogeno-TTFs.