Magnetic properties of rare‐earth‐doped GaN

Abstract

Magnetic properties of Er-doped GaN and Tb-doped GaN films grown by molecular beam epitaxy (MBE) on sapphire substrates (0001) were studied. Magnetization measurements were carried out under magnetic fields ranging from −5 to 5 T, and both samples were reasonably interpreted to exhibit a predominant paramagnetic character. However, for Er-doped GaN, clear finite steps around zero fields were observed throughout the temperature range of 5 K to 300 K, suggesting the coexistence of ferromagnetic order.