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Room-temperature electroluminescence at wavelengths of 5–7 μm from HgCdTe heterostructure diodes
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Citations
10
References
1994
Year
Optical MaterialsEngineeringOptoelectronic DevicesRoom-temperature ElectroluminescenceLuminescence PropertySemiconductorsIi-vi SemiconductorElectronic DevicesOptical PropertiesHgcdte Heterostructure DiodesCompound SemiconductorElectrical EngineeringPhotoluminescencePeak WavelengthsOptoelectronic MaterialsSolid-state LightingApplied PhysicsOptoelectronicsInfrared Microscope Image
Room-temperature electroluminescence at peak wavelengths of 5–7 μm has been observed in metalorganic vapor phase epitaxy-grown mercury cadmium telluride, fully impurity doped, heterostructure, mesa diodes. The internal quantum efficiency at low injection for 5 μm emission is around 4×10−4. Maximum output power at 295 K is 6 nW from an 80 μm diameter device (120 μW cm−2) at 50% duty cycle. The dependence of intensity on current, the emission spectra, and an infrared microscope image of the emission are presented.
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