Heteroepitaxial growth of InN by microwave-excited metalorganic vapor phase epitaxy

Abstract

Epitaxial layers of InN films were grown onto (0001) α-Al2O3 substrates in the temperature range of 400–600 °C by microwave-excited metalorganic vapor phase epitaxy using (CH3)3In and N2. Specular surface was obtained at a low substrate temperature (<500 °C) with a relatively high microwave power (>100 W). From reflection high-energy electron diffraction analysis, the deposited films were found to be crystalline InN with an orientation relation of (0001) InN//(0001) α-Al2O3. The stoichiometry of the grown films was found to be similar to that reported for bulk InN from electron spectroscopy for chemical analysis.